DocumentCode
2705203
Title
Suppressing stress-induced and electromigration failures with Al/Al stacked structure
Author
Shima, Shohei ; Ito, H. ; Shingubara, S.
fYear
1990
fDate
4-7 June 1990
Firstpage
27
Lastpage
28
Abstract
A Al/Al stacked multilayered interconnection that can suppress both stress-induced and electromigration failures without barrier metal was developed. Stress-induced failures are almost completely suppressed and electromigration lifetime is improved more than four times. The higher reliability mechanism is explained in terms of graphed results of the microstructure and mechanical properties
Keywords
VLSI; aluminium; electromigration; metallisation; reliability; Al-Al; Al/Al stacked multilayered interconnection; Al/Al stacked structure; VLSI; electromigration failures suppression; electromigration lifetime; mechanical properties; microstructure; stress induced failures suppression;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on
Conference_Location
Honolulu, Hawaii, USA
Type
conf
DOI
10.1109/VLSIT.1990.110991
Filename
5727451
Link To Document