Sub-atmospheric chemical vapor deposition (SACVD) of TEOS-ozone USG and BPSG

Author

Lee, Peter ; Galiano, Maria ; Keswick, Peter ; Wong, Jerry ; Shin, Bok ; Wang, David

Author_Institution

Applied Mater. Inc., Santa Clara, CA, USA

fYear

1990

fDate

12-13 Jun 1990

Firstpage

396

Lastpage

398

Abstract

Summary form only given. TEOS and ozone based USG and BPSG deposited by subatmospheric CVD (SACVD) have shown good film properties and planarization abilities on high-aspect-ratio structures. The SACVD reactor is capable of operating from low pressure to nearly atmospheric pressure and also in plasma mode. SACVD USG and SACVD BPSG using trimethylborate (TMB) and triethylphosphite (TEP) as dopants are described. In addition, in-situ integration of SACVD, plasma-enhanced CVD (PECVD), and etchback processes is discussed

Keywords

CVD coatings; borosilicate glasses; chemical vapour deposition; glass; integrated circuit technology; phosphosilicate glasses; silicon compounds; B2O3-P2O5-SiO2; BPSG; SACVD reactor; TEOS-ozone USG; dopants; etchback processes; film properties; high-aspect-ratio structures; planarization; plasma mode; plasma-enhanced CVD; subatmospheric CVD; triethylphosphite; trimethylborate; undoped silicate glass; Chemical vapor deposition; Etching; Inductors; Moisture; Planarization; Plasma applications; Plasma materials processing; Plasma properties; Smoothing methods; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1990.127910

Filename

127910