Design, analysis of high electron mobility field effect transistors by a self-consistent method

Author

Liu, D.G. ; Lee, C.P. ; Hwang, H.L.

Author_Institution

Inst. of Electron., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan

fYear

1989

fDate

17-19 May 1989

Firstpage

121

Lastpage

125

Abstract

Three HEMT (high-electron-mobility transistor) structures, the single-heterostructure HEMT (SH-HEMT), the quantum-well HEMT (QW-HEMT) and the delta-doped HEMT (δ-HEMT), are analyzed theoretically by solving the Schrodinger equation and Poisson equation self-consistently. The potential and the carrier distribution as well as the charge control by gate bias are calculated for different structural parameters. Parallel conduction in AlGaAs, which is severe for SH-HEMTs, is greatly reduced in QW-HEMT and δ-HEMT structures. The effect of layer parameters such as spacer-layer thickness and quantum-well width on device performance has been studied

Keywords

III-V semiconductors; Schrodinger equation; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; semiconductor quantum wells; AlGaAs; HEMT; Poisson equation; Schrodinger equation; carrier distribution; charge control; delta-doped; gate bias; high electron mobility field effect transistors; quantum-well; quantum-well width; self-consistent method; single-heterostructure; spacer-layer thickness; structural parameters; Design engineering; Design methodology; Electron mobility; FETs; HEMTs; Poisson equations; Potential energy; Semiconductor devices; Structural engineering; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/VTSA.1989.68596

Filename

68596