A 26 ps self-aligned epitaxial silicon base bipolar technology

Author

Comfort, J.H. ; Lu, Pong-Fei ; Tang, D.D. ; Chen, Tzu-Ching ; Sun, Jack Y.-C ; Meyerson, B.S. ; Lee, Wei-Jen ; Warnock, J. ; Cressler, J.D. ; Toh, K.-Y. ; Cotte, J.M.

fYear

1990

fDate

4-7 June 1990

Firstpage

51

Lastpage

52

Abstract

A self-aligned epitaxial base technology is presented which allows fabrication of advanced bipolar devices with 40 to 60 nm basewidths and implementation of novel profile design concepts. The viability of this technology for advanced bipolar circuits has been examined by fabricating ECL ring oscillators, thus demonstrating that fully scaled epi-base devices can be successfully integrated. Devices with current gains of 80-90 and intrinsic base sheet resistances less than 10 kΩ/sq were fabricated. Epitaxial technology was used to position a novel lightly doped collector (LDC) spacer within the base collector junction of these heavily doped, thin-base devices to control avalanche breakdown and increase BV_CEO. Conventional and active pull-down ECL ring oscillators with minimum gate delays of 40.5 and 26.3 ps, respectively, were fabricated with devices showing a measured cutoff frequency of 19.6 GHz

Keywords

bipolar integrated circuits; elemental semiconductors; emitter-coupled logic; integrated circuit technology; semiconductor epitaxial layers; silicon; 19.6 GHz; 26.3 ps; 40.5 ps; ECL ring oscillators; active pull-down; advanced bipolar circuits; advanced bipolar devices; avalanche breakdown; cutoff frequency; fully scaled epi-base devices; gate delays; intrinsic base sheet resistances; lightly doped collector; profile design concepts; self-aligned epitaxial base technology; thin-base devices;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on

Conference_Location

Honolulu, Hawaii, USA

Type

conf

DOI

10.1109/VLSIT.1990.111003

Filename

5727463