STRIPE-a high-speed VLSI bipolar technology featuring self-aligned single-poly base and submicron emitter contacts

Author

Drowley, C.I. ; Huang, W.M. ; Vande Voorde, P.J. ; Pettengill, D. ; Turner, J.E. ; Kapoor, A.K. ; Lin, C.-H. ; Burton, G. ; Rosner, S.J. ; Brigham, K. ; Fu, H.-S. ; Oh, Se-Young ; Scott, M.P. ; Chiang, S.-Y. ; Wang, Aiping

fYear

1990

fDate

4-7 June 1990

Firstpage

53

Lastpage

54

Abstract

Experimental results are presented for a high-performance silicon bipolar transistor structure utilizing a single layer of polysilicon for both the base and emitter contacts. This structure, called STRIPE (self-aligned trench-isolated polysilicon electrodes), provides a 2.0-μm emitter/base polysilicon contact separation. A 0.4-μm emitter width is achieved with conventional 0.8-μm optical lithography. These dimensions are comparable to those achievable with double-poly structures. Using the STRIPE structure, transistors have been fabricated with cutoff frequency as high as 33.8 GHz

Keywords

VLSI; bipolar integrated circuits; integrated circuit technology; photolithography; 0.4 micron; 0.8 micron; 2.0 micron; 33.8 GHz; STRIPE; Si; base contacts; bipolar technology; bipolar transistor structure; cutoff frequency; emitter/base polysilicon contact separation; high-speed; optical lithography; self-aligned trench-isolated polysilicon electrodes; submicron emitter contacts;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on

Conference_Location

Honolulu, Hawaii, USA

Type

conf

DOI

10.1109/VLSIT.1990.111004

Filename

5727464