DocumentCode
270552
Title
InAs nanowire MOSFET differential active mixer on Si-substrate
Author
Persson, Karl-Magnus ; Berg, Markus ; Sjöland, Henrik ; Lind, Erik ; Wernersson, Lars-Erik
Author_Institution
Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden
Volume
50
Issue
9
fYear
2014
fDate
April 24 2014
Firstpage
682
Lastpage
683
Abstract
An active single balanced down-conversion mixer is implemented using InAs nanowire metal oxide semiconductor field effect transistors (MOSFETs) as both active devices and passive resistive loads. Circuits with 6 dB low-frequency voltage gain and a 3 dB bandwidth of 2 GHz are measured for a DC power consumption of 3.8 mW from a 1.5 V supply. The circuits are fabricated using contacts made with 12 μm-line-width optical lithography.
Keywords
III-V semiconductors; MOSFET; elemental semiconductors; indium compounds; mixers (circuits); photolithography; silicon; DC power consumption; InAs; Si; active devices; active single balanced down-conversion mixer; bandwidth 2 GHz; indium arsenide nanowire MOSFET differential active mixer; line-width optical lithography; low-frequency voltage gain; metal oxide semiconductor field effect transistors; passive resistive loads; power 3.8 mW; silicon substrate; size 12 mum; voltage 1.5 V;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2013.4219
Filename
6809293
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