DocumentCode
2705608
Title
A spill over effect of avalanche generated electrons in buried pMOSFETs
Author
Hiroki, A. ; Odanaka, S. ; Morii, T.
fYear
1990
fDate
4-7 June 1990
Firstpage
71
Lastpage
72
Abstract
Hot carrier effects of a buried pMOSFET in the retrograde n-well have been investigated. A new phenomenon, a spill-over effect of avalanche-generated electrons into the bulk, was discovered. This effect is inherent in pMOSFETs fabricated in the n-well with high doping. It is shown that the effect reduces the hot-electron-induced device degradation even with high hot-electron generation
Keywords
doping profiles; hot carriers; impact ionisation; insulated gate field effect transistors; avalanche generated electrons; buried pMOSFETs; hot-electron-induced device degradation; retrograde n-well; spill over effect;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on
Conference_Location
Honolulu, Hawaii, USA
Type
conf
DOI
10.1109/VLSIT.1990.111013
Filename
5727473
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