DocumentCode :
2705632
Title :
2D-evaluation of the gas response of a RhPd-MIS device
Author :
Klingvall, Roeer ; Lundström, Ingemar ; Löfdahl, Mikael ; Eriksson, Mats
Author_Institution :
S-SENCE & Appl. Phys., Linkoping Univ., Sweden
Volume :
2
fYear :
2003
fDate :
22-24 Oct. 2003
Firstpage :
1114
Abstract :
A two dimensional variation of the properties of the gas sensitive layer of a metal-insulator-semiconductor (MIS) structure has been analysed with the Scanning Light Pulse Technique (SLPT). This technique allows a lateral resolution of the local gas response for such a device. The results indicate that this method can be used in order to choose an appropriate thickness combination of the metal films for a double layer component so that the sensor properties can be optimised. Furthermore, the results indicate that optimal properties of the gas sensitive layer differ from one gas to another. This is exemplified with hydrogen and ethanol.
Keywords :
MIS capacitors; MIS devices; gas sensors; hydrogen; organic compounds; palladium alloys; rhodium alloys; 2D-evaluation; RhPd-MIS device; Scanning Light Pulse Technique; ethanol; gas response; gas sensitive layer; hydrogen; lateral resolution; metal-insulator-semiconductor structure; thickness combination; Capacitive sensors; Chemical sensors; Ethanol; Gas detectors; Hydrogen; Image sensors; Physics; Temperature sensors; Testing; Thick film sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2003. Proceedings of IEEE
Print_ISBN :
0-7803-8133-5
Type :
conf
DOI :
10.1109/ICSENS.2003.1279116
Filename :
1279116
Link To Document :
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