Title :
Merged complementary BiCMOS for logic applications
Author :
Ogura, S. ; Rovedo, N. ; Acocella, J. ; Dally, A. ; Yanagisawa, T. ; Burkhardt, J. ; Buti, T. ; Richwine, C. ; Montegari, F. ; Barnes, K. ; Ng, C. ; Valsamakis, E. ; Codella, C.
Abstract :
The deficiencies of BiCMOS logic are analyzed, and the addition of a high-performance vertical pnp to the BiCMOS technology, henceforth called complementary BiCMOS technology, is considered as a solution. It is suggested that density problems associated with BiCMOS logic can be alleviated by replacing the conventional BiCMOS logic circuit, i.e. the `totem-pole´ circuit, with a simpler complementary emitter follower circuit. This circuit allows the use of a merged bipolar-FET device structure as well as a common subcollector for the pnp, which further increases density. Another benefit of the common subcollector is that it reduces the process complexity associated with the addition of the vertical pnp. High performance is demonstrated with results from a test circuit with delays of 250 pS with 0.3 pF loading
Keywords :
BIMOS integrated circuits; integrated circuit technology; integrated logic circuits; 0.3 pF; 250 ps; common subcollector; complementary emitter follower circuit; density problems; high-performance vertical pnp; logic applications; merged bipolar-FET device structure; merged complementary BiCMOS; process complexity;
Conference_Titel :
VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on
Conference_Location :
Honolulu, Hawaii, USA
DOI :
10.1109/VLSIT.1990.111018