Two-dimensional charge carrier systems for chemical sensors: AlGaN/GaN and diamond

Author

Stutzmann, M. ; Garrido, Jose Antonio ; Eickhoff, M.

Author_Institution

Walter Schottky Inst., Garching, Germany

Volume

2

fYear

2003

fDate

22-24 Oct. 2003

Firstpage

1153

Abstract

The use of spontaneously formed two-dimensional electron and hole gases at AlGaN/GaN hetero-interfaces and at the surface of hydrogen-terminated diamond for novel sensor devices is reviewed. The physical origin of these two-dimensional carrier systems is briefly described and recent results concerning their interaction with ions and gases are outlined In both cases, a controlled oxidation of the exposed surface turns out to be important for an optimum sensor operation.

Keywords

III-V semiconductors; aluminium compounds; chemical sensors; diamond; elemental semiconductors; gallium compounds; oxidation; two-dimensional electron gas; two-dimensional hole gas; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN; C; chemical sensors; controlled oxidation; diamond; exposed surface; two-dimensional charge carrier systems; two-dimensional electron gases; two-dimensional hole gases; Aluminum gallium nitride; Charge carrier processes; Charge carriers; Chemical sensors; Control systems; Gallium nitride; Gases; Oxidation; Sensor phenomena and characterization; Sensor systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2003. Proceedings of IEEE

Print_ISBN

0-7803-8133-5

Type

conf

DOI

10.1109/ICSENS.2003.1279125

Filename

1279125