MISiC-FET devices with bias controlled baseline and gas response

Author

Nakagomi, Shinji ; Takahashi, Masamichi ; Savage, Susan ; Unéus, Lars ; Wingbrant, Helena ; Andersson, Mike ; Lundström, Lngemar ; Löfdahl, Mikael ; Spetz, Anita Lloyd

Author_Institution

Sch. of Sci. & Eng., Ishinomaki Senshu Univ, Miyagi, Japan

Volume

2

fYear

2003

fDate

22-24 Oct. 2003

Firstpage

1168

Abstract

The drain current-voltage characteristics of a chemical gas sensor based on a catalytic metal insulator silicon carbide field effect transistor (MISiC-FET) was measured in H₂ and O₂ ambient while applying negative substrate bias at temperatures up to 600°C. It is reported that the gas sensitivity can be amplified and the position of the base-line controlled by applying a negative substrate bias to the MISiC-FET device, which is a buried short channel device. This is possible in a wide range of drain current levels and over a large temperature range.

Keywords

MISFET; chemical sensors; gas sensors; silicon compounds; surface potential; wide band gap semiconductors; 600 degC; H₂; MISiC-FET devices; O₂; SiC; bias controlled baseline; catalytic metal insulator silicon carbide field effect transistor; chemical gas sensor; drain current-voltage characteristics; gas response; gas sensitivity; Chemical sensors; Current measurement; Current-voltage characteristics; FETs; Gas detectors; Gas insulation; Metal-insulator structures; Silicon carbide; Temperature distribution; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2003. Proceedings of IEEE

Print_ISBN

0-7803-8133-5

Type

conf

DOI

10.1109/ICSENS.2003.1279129

Filename

1279129