Non-invasive silicon temperature measurement by infrared transmission for rapid thermal processing applications

Author

Sturm, James C. ; Schwartz, P.V. ; Garone, P.M.

fYear

1990

fDate

4-7 June 1990

Firstpage

107

Lastpage

108

Abstract

A method for the noninvasive measurement of silicon wafer temperature based on infrared transmission is presented. The method is well suited to the 400-800°C temperature range, can be used through thick quartz walls, and is compatible with rapid thermal processing and epitaxial growth. The approach relies on the decreased bandgap, higher phonon population, and increased free carrier concentrations in silicon at elevated temperatures. These effects cause increased optical absorption in the infrared (near band-edge) region due to both increased band-to-band and intraband absorption. By measuring the infrared optical transmission of the wafer in situ during processing, an intimate measure of the wafer temperature can be attained. Improved control of silicon-germanium film growth has been demonstrated

Keywords

annealing; elemental semiconductors; impurity and defect absorption spectra of inorganic solids; infrared spectra of inorganic solids; semiconductor epitaxial layers; silicon; spectral methods of temperature measurement; 400 to 800 degC; Si; SiGe; band-to-band absorption; decreased bandgap; epitaxial growth; free carrier concentrations; infrared transmission; intraband absorption; noninvasive measurement; optical absorption; phonon population; rapid thermal processing applications; semiconductor; wafer temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on

Conference_Location

Honolulu, Hawaii, USA

Type

conf

DOI

10.1109/VLSIT.1990.111031

Filename

5727491