Device performance analysis using Monte-Carlo simulator for SOI MOS transistors on solid-phase-recrystallized silicon films

Author

Kambayashi, S. ; Mizushima, I. ; Kemmochi, M. ; Kawaguchi, H. ; Shima, Shohei ; Kuwano, H. ; Onga, S. ; Matsunaga, J.

fYear

1990

fDate

4-7 June 1990

Firstpage

109

Lastpage

110

Abstract

A Monte Carlo simulator has been developed that can trace random nucleation and regrowth characteristics for silicon-on-insulator MOS transistors and can predict the distribution of device characteristics. Activation energies for nucleation and regrowth in solid-phase were derived to be 3.9 eV and 2.8 eV, respectively. Localized states caused by the regrowth boundary were observed as a function of regrown grain size where values were two orders of magnitude larger than for bulk MOS. Threshold voltage shift and carrier mobility could be interpreted mainly in terms of the density-of-states and boundary structure; the distribution of threshold voltage and mobility were predicted closely by the Monte Carlo simulator

Keywords

Monte Carlo methods; carrier mobility; electronic density of states; insulated gate field effect transistors; nucleation; semiconductor-insulator boundaries; 2.8 eV; 3.9 eV; Monte-Carlo simulator; SOI MOS transistors; Si; carrier mobility; density-of-states; device characteristics; random nucleation; regrown grain size; regrowth boundary; regrowth characteristics; solid-phase-recrystallised films; threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on

Conference_Location

Honolulu, Hawaii, USA

Type

conf

DOI

10.1109/VLSIT.1990.111032

Filename

5727492