DocumentCode
2706216
Title
Linear and non-linear effects of n-silicon: theory and simulation
Author
Tellier, C.R. ; Durand, S.
Author_Institution
LCEP., ENSMM, Besancon, France
Volume
2
fYear
2003
fDate
22-24 Oct. 2003
Firstpage
1249
Abstract
In this paper new theoretical expressions are derived for the reference shear LPC and for all reference NLPC related to shear stresses that allow us to characterize the influence of temperature and of doping. A simulator PIEZOSIM was developed where computations of primed LPC and NLPC involve reference piezoresistance coefficients related to uniaxial and/or shear stresses. This simulator seems to be a convenient tool to investigate advantages of piezoresistive elements with special orientations.
Keywords
electric sensing devices; elemental semiconductors; piezoresistance; shear strength; silicon; stress measurement; Si; n-Si; piezoresistive elements; reference piezoresistance coefficients; reference shear LPC; shear stresses; uniaxial stresses; Boltzmann equation; Computational modeling; Doping; Electrons; Force measurement; Linear predictive coding; Piezoresistance; Silicon; Stress; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2003. Proceedings of IEEE
Print_ISBN
0-7803-8133-5
Type
conf
DOI
10.1109/ICSENS.2003.1279145
Filename
1279145
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