Title :
Linear and non-linear effects of n-silicon: theory and simulation
Author :
Tellier, C.R. ; Durand, S.
Author_Institution :
LCEP., ENSMM, Besancon, France
Abstract :
In this paper new theoretical expressions are derived for the reference shear LPC and for all reference NLPC related to shear stresses that allow us to characterize the influence of temperature and of doping. A simulator PIEZOSIM was developed where computations of primed LPC and NLPC involve reference piezoresistance coefficients related to uniaxial and/or shear stresses. This simulator seems to be a convenient tool to investigate advantages of piezoresistive elements with special orientations.
Keywords :
electric sensing devices; elemental semiconductors; piezoresistance; shear strength; silicon; stress measurement; Si; n-Si; piezoresistive elements; reference piezoresistance coefficients; reference shear LPC; shear stresses; uniaxial stresses; Boltzmann equation; Computational modeling; Doping; Electrons; Force measurement; Linear predictive coding; Piezoresistance; Silicon; Stress; Temperature sensors;
Conference_Titel :
Sensors, 2003. Proceedings of IEEE
Print_ISBN :
0-7803-8133-5
DOI :
10.1109/ICSENS.2003.1279145
