Reliability imposed constraints on current density of high performance poly-emitter bipolar transistors

Author

Joshi, S.P.

Author_Institution

Nat. Semicond. Corp., Puyallup, WA, USA

fYear

1990

fDate

17-18 Sep 1990

Firstpage

180

Lastpage

183

Abstract

The hot carrier induced degradation of self-aligned poly-emitter bipolar transistors under forward active stress at elevated temperatures is investigated. Low current and high current beta instability is determined to be an emitter perimeter effect. Since most of the high-performance ECL (emitter coupled logic) circuits operate at high current levels, a predictive/quantitative model is developed to determine the stability and reliability of self-aligned bipolar transistors in the high-current regime

Keywords

bipolar transistors; current density; hot carriers; reliability; semiconductor device models; stability; Si; current density; elevated temperatures; emitter coupled logic; emitter perimeter effect; forward active stress; high current beta instability; high performance ECL circuits; high-current regime; hot carrier induced degradation; poly-emitter bipolar transistors; polysilicon; predictive/quantitative model; reliability; self-aligned bipolar transistors; stability; Bipolar transistors; Circuit stability; Coupling circuits; Current density; Degradation; Hot carriers; Logic circuits; Predictive models; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1990., Proceedings of the 1990

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1990.171157

Filename

171157