DocumentCode
2706495
Title
A microstructure semiconductor thermocouple for microwave power sensors
Author
Chen Deyong ; Cui Dafu ; Han Jinghong ; Chen Shaofeng ; Li, Wang ; Zigao, Li ; Binxiang, Fu
Author_Institution
Inst. of Electron., Acad. Sinica, Beijing, China
Volume
3
fYear
1997
fDate
2-5 Dec 1997
Firstpage
917
Abstract
By using standard silicon planar process, combined with an anisotropically etch technology, a microstructure Si-Ta2N thermocouple for microwave power sensors has been fabricated. The sensor has a sensitivity as high as 200 μV/mW over a frequency range of 10 MHz to 18 GHz at a power level from 1 μW to 100 mW
Keywords
elemental semiconductors; etching; microwave detectors; power measurement; silicon; tantalum compounds; thermocouples; 1 muW to 100 mW; 10 MHz to 18 GHz; Si-Ta2N; anisotropic etching; microstructure semiconductor thermocouple; microwave power sensor; silicon planar process; Anisotropic magnetoresistance; Frequency; Microstructure; Microwave sensors; Power measurement; Silicon; Sputter etching; Temperature sensors; Thermal sensors; Thermistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific
Print_ISBN
962-442-117-X
Type
conf
DOI
10.1109/APMC.1997.656348
Filename
656348
Link To Document