DocumentCode :
2706552
Title :
Design guidelines for deep-sub-micrometer interconnections
Author :
Ushiku, Yukihiro ; Kushibe, Hidefumi ; Ono, Hisako ; Nishiyama, Akira
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fYear :
1990
fDate :
12-13 Jun 1990
Firstpage :
413
Lastpage :
415
Abstract :
Design guidelines for deep-submicrometer interconnections are proposed. Wiring capacitance, interconnection delays, and crosstalk noise were simulated using a three-dimensional capacitance simulator and SPICE, in order to define such interconnection parameters as the thickness and material of the conductors and insulators and the ratio of line width to spacing. Based on this analysis, it is recommended that the aspect ratio be less than one. The importance of low-resistivity metals at sub-half-micrometer dimensions is also demonstrated. The extreme limit for interconnections does not extend very far beyond 0.2 μm, so a new design concept will be needed for deep-submicrometer VLSI circuits
Keywords :
VLSI; crosstalk; delays; electronic engineering computing; integrated circuit technology; metallisation; 0.2 to 0.5 micron; SPICE; VLSI circuits; crosstalk noise; deep-sub-micrometer interconnections; interconnection delays; low-resistivity metals; submicron ICs; three-dimensional capacitance simulator; Capacitance; Conducting materials; Crosstalk; Delay; Guidelines; Insulation; Integrated circuit interconnections; SPICE; Very large scale integration; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
Type :
conf
DOI :
10.1109/VMIC.1990.127916
Filename :
127916
Link To Document :
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