Title :
A 1 Mbit EEPROM with MONOS memory cell for semiconductor disk application
Author :
Nozaki, Takaaki ; Tanaka, Toshiaki ; Kijiya, Yoshiro ; Kinoshita, Eita ; Tsuchiya, Tatsuo ; Hayashi, Yutaka
Abstract :
The authors describe a 5-V-only 1-Mb EEPROM for semiconductor disk application with a newly developed MONOS memory cell and CMOS periphery circuits. The cell size is reducer to be as small as that of UV-erasable EPROMs, and high-speed data programming of a 140 ms/chip (1.1 μs/B equivalent) is realized by adopting block erase mode and page write mode
Keywords :
CMOS integrated circuits; EPROM; PLD programming; integrated memory circuits; 1 Mbit; 5 V; CMOS periphery circuits; EEPROM; MONOS memory cell; block erase mode; high-speed data programming; page write mode; semiconductor disk application;
Conference_Titel :
VLSI Circuits, 1990. Digest of Technical Papers., 1990 Symposium on
Conference_Location :
Honolulu, Hawaii, USA
DOI :
10.1109/VLSIC.1990.111115
