Ku-band phase shifter based on injection locked voltage oscillator

Author

Tseng, Wei-Je ; Tsai, Zuo-Min ; Lin, Chin-Shen ; Wang, Huei

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2010

fDate

Aug. 28 2010-Sept. 3 2010

Firstpage

1

Lastpage

4

Abstract

In this letter, a Ku-band phase shifter based on injection locked voltage control oscillator is designed and fabricated in standard 0.18-μm CMOS technology. The low quality factor LC tank is used to enhance the tuning and locking range, and also minimize the phase noise degradation. The maximum phase shift at 14.84 GHz with -3 dBm input power is 179° and the output power of injection locked VCO is about -8.5 dBm with 0.9-V bias and 14-mW dc power. This feature of large phase shift range over wide bandwidth makes this phase shifter suitable for phased-array applications.

Keywords

CMOS integrated circuits; Q-factor; circuit noise; circuit tuning; injection locked oscillators; microwave phase shifters; phase noise; voltage-controlled oscillators; CMOS technology; Ku-band phase shifter; frequency 14.84 GHz; injection locked voltage control oscillator; locking range; maximum phase shift; phase noise degradation; phased-array application; power 14 mW; quality factor LC tank; size 0.18 mum; tuning range; voltage 0.9 V; Phase noise; Phase shifters; Power generation; Semiconductor device measurement; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Information Technology and Systems (ICWITS), 2010 IEEE International Conference on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-7091-4

Type

conf

DOI

10.1109/ICWITS.2010.5612270

Filename

5612270