DocumentCode
2707225
Title
Investigation of current transport and charges in graded base HBTs
Author
Ryum, Byung R. ; Abdel-motaleb, Ibrahim M.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
fYear
1990
fDate
17-18 Sep 1990
Firstpage
199
Lastpage
202
Abstract
An all injection model for graded-base HBTs (heterojunction bipolar transistors) has been developed and found to agree well with experimental results. The model shows that assuming low injection level and base transit time current independence may not be valid in all cases. Recombination current components have been formulated. The base grading effect on current components and current gain is investigated. The results show that as Al mole fraction increases gain increases to a maximum, then decreases
Keywords
heterojunction bipolar transistors; semiconductor device models; base transit time current independence; current transport; graded base HBTs; heterojunction bipolar transistors; injection model; recombination current components; Analytical models; Charge carrier processes; Circuits; Current density; Electron emission; Electron mobility; Heterojunction bipolar transistors; Niobium; Photonic band gap; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar Circuits and Technology Meeting, 1990., Proceedings of the 1990
Conference_Location
Minneapolis, MN
Type
conf
DOI
10.1109/BIPOL.1990.171162
Filename
171162
Link To Document