Design of SiGe BiCMOS LNA with ESD Protection for Multi-band Navigation Receiver Front-End

An ESD protected, SiGe BiCMOS wide-band LNA operating at 1.1—1.7GHz is presented in this paper. The cascoded common-emitter LNA with an LC input matching network and shunt peaked load is adopted. The effects of the ESD protection on the performance are discussed. The LNA is implemented in a 0.35-μ m SiGe BiCMOS process with fT = 45G Hz. The post simulation results show that the noise figure is 1.7dB with a high S21 (22.5dB) and IIP3 of -17dBm, consuming total current of 8.1mA with an output buffer. The circuit is simulated under the combination of process corners and variation of temperature and power supply voltage.