DocumentCode
270739
Title
Characterization of piezoresistive coefficients in silicon nanowire transistors
Author
Pelloux-Prayer, J. ; CasseÌ, M. ; Barraud, S. ; RouvieÌ€re, J.-L. ; Reimbold, Gilles
Author_Institution
LETI, CEA, Grenoble, France
fYear
2014
fDate
7-9 April 2014
Firstpage
49
Lastpage
52
Abstract
This paper presents an experimental study of the piezoresistive (PR) coefficients in silicon nanowire (NW) transistors as a function of NW width down to 10 nm. We have evidenced the variation of these coefficients as the width shrinks from wide SOI down to nanowire transistors, for both NMOS and PMOS. Below a critical width Wcrit ≈ 100 nm, the longitudinal PR coefficient is improved for electrons, whereas it is reduced for holes. Our results are explained by the modification of the Si NW´s bandstructure with narrow dimensions.
Keywords
MOSFET; elemental semiconductors; nanowires; piezoresistive devices; silicon; NMOS; NW width; PMOS; SOI; Si; bandstructure modification; longitudinal PR coefficient; nanowire transistors; piezoresistive coefficients; MOSFET; Piezoresistance; Semiconductor device measurement; Silicon; Stress; CMOS; Nanowire; piezoresistance; strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on
Conference_Location
Stockholm
Type
conf
DOI
10.1109/ULIS.2014.6813903
Filename
6813903
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