Title :
Fabrication of polysilicon plugs for deep-submicron contact-holes
Author :
Drynan, J.M. ; Ikawa, E. ; Kikkawa, T.
Author_Institution :
NEC Corp., Sagamihara, Japan
Abstract :
Summary form only given. Contact holes with diameters down to 150 nm have been successfully plugged with polysilicon using a double-deposition low-pressure chemical vapor deposition (LPCVD) and double-phosphorus diffusion process. A 510°C poly-Si deposition temperature was found to yield films with better contact-hole step coverage and lower resistivity than higher-temperature films. The contact resistance of 200-nm-diameter contact holes was measured to be below 100 Ω. This polysilicon plug process has been used for 64-MDRAM bit-line contacts
Keywords :
DRAM chips; VLSI; chemical vapour deposition; integrated circuit technology; metallisation; semiconductor doping; 100 ohm; 150 nm; 200 nm; 510 degC; 64 Mb DRAM; 64 Mbit; 64-MDRAM; IC technology; P double diffusion; Si:P; ULSI; VLSI; bit-line contacts; contact resistance; contact-hole step coverage; deep-submicron contact-holes; double deposition LPCVD; low-pressure chemical vapor deposition; multilevel interconnection; polysilicon plug process; polysilicon plugs; resistivity; Conductivity; Contact resistance; Etching; Fabrication; Metallization; Microelectronics; Morphology; Plugs; Semiconductor films; Temperature;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127924
