The photoresponse of Hg0.722Cd0.278Te infrared photodiodes with a heavily doped n Region

Author

Wang, J. ; Chen, X.S. ; Hu, W.D. ; Lu, W. ; Xu, F.Q.

fYear

2010

fDate

5-10 Sept. 2010

Firstpage

1

Lastpage

2

Abstract

In this paper, we report on two-dimensional (2D) numerical simulations of photoresponse for HgCdTe infrared photodiode. Effects of conduction band non-parabolic and band gap narrowing (BGN) have been investigated in detail. By taking into account the contributions: (i) the Burstein-Moss (BM) shift with a non-parabolic conduction band, (ii) the BGN effect, and (iii) the Hg-vacancy-induced acceptor trap level, we have obtained the photoresponse of Hg_0.722Cd_0.278Te infrared photodiode. Our simulation results are in good agreement with those in experiments.

Keywords

II-VI semiconductors; cadmium compounds; conduction bands; energy gap; heavily doped semiconductors; impurity states; infrared detectors; mercury compounds; numerical analysis; photodetectors; photodiodes; vacancies (crystal); wide band gap semiconductors; 2D numerical simulations; Burstein-Moss shift; Hg-vacancy-induced acceptor trap level; Hg_0.722Cd_0.278Te; HgCdTe infrared photodiode; band gap narrowing; heavily doped n region; nonparabolic conduction band; photoresponse; Materials; Numerical models; Photodiodes; Photonic band gap; Photovoltaic systems; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on

Conference_Location

Rome

Print_ISBN

978-1-4244-6655-9

Type

conf

DOI

10.1109/ICIMW.2010.5612301

Filename

5612301