Title :
Laser planarization of AlSiCu on various barrier metals for VLSI
Author :
Yu, Chang ; Doan, Trung T. ; Kim, Sung
Author_Institution :
Micron Technol. Inc., Boise, ID, USA
Abstract :
Laser planarization of AlSiCu film on diffusion barriers of Ti/RTA TiN, Ti, RTA TiN, reactive TiN/Ti, and TiW was investigated to determine the effect of the barrier layer on the process window and junction integrity. While the process window did not vary significantly for various diffusion barriers investigated, each barrier scheme showed a different degree of effectiveness in preserving the junction integrity during laser processing. In addition, for a given diffusion barrier scheme, the junction integrity was found to depend on the substrate temperature and optical fluence
Keywords :
VLSI; aluminium alloys; copper alloys; integrated circuit technology; metallisation; silicon alloys; AlSiCu film; AlSiCu-Ti-TiN-Ti-TiN; AlSiCu-TiN-Ti; AlSiCu-TiW; IC technology; VLSI; barrier metals; diffusion barriers; junction integrity; laser planarization; laser processing; multilevel interconnection; optical fluence; process window; substrate temperature; Contacts; Optical films; Optical pulses; Optical sensors; Planarization; Power lasers; Substrates; Temperature dependence; Tin; Very large scale integration;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127925
