• DocumentCode
    2707800
  • Title

    Silicon-on-insulator dynamic threshold ESD networks and active clamp circuitry

  • Author

    Voldman, S. ; Hui, D. ; Young, D. ; Williams, R. ; Dreps, D. ; Howard, J. ; Sherony, M. ; Assaderaghi, F. ; Shahidi, G.

  • Author_Institution
    Microelectron. Div., IBM Corp., Essex Junction, VT, USA
  • fYear
    2000
  • fDate
    26-28 Sept. 2000
  • Firstpage
    29
  • Lastpage
    40
  • Abstract
    Active clamp circuits are key to minimize electrical overshoot and undershoot and minimize reflected signals and achieve performance objectives and reliability requirements in high performance CMOS circuits. This paper discusses for the first time the electrostatic discharge (ESD) protection circuits of silicon-on-insulator (SOI) active clamp networks, dynamic threshold MOSFET SOI ESD techniques and the synthesis of DTMOS concepts, ESD protection networks, and active clamp circuitry for high-pin-count high-performance semiconductor chips.
  • Keywords
    CMOS integrated circuits; MOSFET; active networks; electrostatic discharge; integrated circuit measurement; integrated circuit reliability; protection; silicon-on-insulator; CMOS circuits; DTMOS concept synthesis; ESD protection circuits; ESD protection networks; SOI active clamp networks; Si-SiO/sub 2/; active clamp circuitry; active clamp circuits; dynamic threshold MOSFET SOI ESD techniques; electrical overshoot minimization; electrical undershoot minimization; electrostatic discharge protection circuits; high-performance semiconductor chips; performance objectives; pin-count; reflected signal minimization; reliability requirements; silicon-on-insulator dynamic threshold ESD networks; CMOS technology; Clamps; Electrostatic discharge; MOSFET circuits; Power MOSFET; Power system protection; Research and development; Silicon on insulator technology; Switching circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000
  • Conference_Location
    Anaheim, CA, USA
  • Print_ISBN
    1-58537-018-5
  • Type

    conf

  • DOI
    10.1109/EOSESD.2000.890024
  • Filename
    890024