DocumentCode
2707851
Title
Influence of the charging effect on HBM ESD device testing
Author
Brodbeck, Tilo
Author_Institution
Infineon Technol. AG, Munich, Germany
fYear
2000
fDate
26-28 Sept. 2000
Firstpage
66
Lastpage
71
Abstract
The standards for testing the ESD sensitivity of electronic components according to the HBM (MIL, JEDEC, ESDA) require a specific switch in the HBM ESD waveform generator to ensure that the socket and the DUT is not left in a charged state after the stress. The absence of this switch may result in the wrong ESD threshold levels. For two different waveform generators, the charging effect was measured by using an electrostatic voltmeter. An unexpected experimental result, showing that the HBM ESD threshold voltage strongly depends on the number of stress pulses, could be explained by the measured charging of these components. Consequences for other types of components and corrective actions are discussed.
Keywords
electrostatic discharge; integrated circuit testing; military standards; semiconductor device testing; standards; waveform generators; DUT charged state; ESD sensitivity test standards; ESD threshold levels; ESDA standards; HBM; HBM ESD device testing; HBM ESD threshold voltage; HBM ESD waveform generator; HBM ESD waveform generator switch; JEDEC standards; MIL standards; charging effect; component charging; corrective actions; electronic components; electrostatic voltmeter; socket charged state; stress pulses; waveform generators; Electronic components; Electronic equipment testing; Electrostatic discharge; Electrostatic measurements; Pulse measurements; Signal generators; Sockets; Stress; Switches; Voltmeters;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-58537-018-5
Type
conf
DOI
10.1109/EOSESD.2000.890029
Filename
890029
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