DocumentCode :
2707851
Title :
Influence of the charging effect on HBM ESD device testing
Author :
Brodbeck, Tilo
Author_Institution :
Infineon Technol. AG, Munich, Germany
fYear :
2000
fDate :
26-28 Sept. 2000
Firstpage :
66
Lastpage :
71
Abstract :
The standards for testing the ESD sensitivity of electronic components according to the HBM (MIL, JEDEC, ESDA) require a specific switch in the HBM ESD waveform generator to ensure that the socket and the DUT is not left in a charged state after the stress. The absence of this switch may result in the wrong ESD threshold levels. For two different waveform generators, the charging effect was measured by using an electrostatic voltmeter. An unexpected experimental result, showing that the HBM ESD threshold voltage strongly depends on the number of stress pulses, could be explained by the measured charging of these components. Consequences for other types of components and corrective actions are discussed.
Keywords :
electrostatic discharge; integrated circuit testing; military standards; semiconductor device testing; standards; waveform generators; DUT charged state; ESD sensitivity test standards; ESD threshold levels; ESDA standards; HBM; HBM ESD device testing; HBM ESD threshold voltage; HBM ESD waveform generator; HBM ESD waveform generator switch; JEDEC standards; MIL standards; charging effect; component charging; corrective actions; electronic components; electrostatic voltmeter; socket charged state; stress pulses; waveform generators; Electronic components; Electronic equipment testing; Electrostatic discharge; Electrostatic measurements; Pulse measurements; Signal generators; Sockets; Stress; Switches; Voltmeters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-58537-018-5
Type :
conf
DOI :
10.1109/EOSESD.2000.890029
Filename :
890029
Link To Document :
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