Title :
A 108 GHz GaAs MHEMT VCO MMIC
Author :
Wang Weibo ; Wang Zhigong ; Zhang Bin ; Kang Yaohui ; Wu Liqun ; Yang Naibin
Author_Institution :
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
Abstract :
A W-band VCO MMIC is first time reported in this paper in China, To eliminate the parasitic resistance of the oscillator loop, this chip utilizes the source capacitive feedback forming the negative resistance. Through the reasonable output matching network, the chip also realize the frequency start-up condition and restrain the output harmonic. Finally, Fabricated by the NEDI´s 0.15 um GaAs MHEMT technology, the mmic typically oscillates at the 108 GHz and ranges from 106.8 GHz to 108.4 GHz, voltage-controlled-bandwidth and typical output power achieves 1.6 GHz and -8.5 dBm respectively.
Keywords :
III-V semiconductors; MMIC oscillators; gallium arsenide; high electron mobility transistors; millimetre wave oscillators; voltage-controlled oscillators; China; GaAs; MHEMT VCO MMIC; NEDI´s MHEMT technology; W-band VCO MMIC; frequency 106.8 GHz to 108.4 GHz; matching network; negative resistance; size 0.15 mum; source capacitive feedback; voltage controlled bandwidth; Feedback loop; Frequency; Gallium arsenide; Impedance matching; MMICs; Negative feedback; Power generation; Voltage; Voltage-controlled oscillators; mHEMTs; MHEMT; MMIC Introduction (Heading 1); VCO; W-band;
Conference_Titel :
Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2009 3rd IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-4076-4
DOI :
10.1109/MAPE.2009.5355843
