A method for determining a transmission line pulse shape that produces equivalent results to human body model testing methods

Author

Lee, J.C. ; Hoque, M.A. ; Croft, G.D. ; Liou, J.J. ; Young, W.R. ; Bernier, J.C.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA

fYear

2000

fDate

26-28 Sept. 2000

Firstpage

97

Lastpage

104

Abstract

Electrostatic discharge (ESD) is responsible for more than 25% of semiconductor device and chip damage each year. This paper focuses on an ESD event resulting from the charge being transferred from a human body to an integrated circuit (i.e. the human body model, HBM). In particular, the study provides simulation and experimental results to determine the main mechanism governing the failure of MOS devices subjected to the HBM stress. Based on this mechanism, the correct pulse needed to measure the HBM ESD characteristics using the transmission line pulse (TLP) technique is also determined and recommended.

Keywords

MOS integrated circuits; MOSFET; circuit simulation; electrostatic discharge; failure analysis; integrated circuit modelling; integrated circuit testing; transmission lines; ESD; ESD event; HBM; HBM ESD characteristics; HBM stress; MOS device failure mechanism; TLP technique; charge transfer; electrostatic discharge; human body model; human body model testing methods; integrated circuit; semiconductor chip damage; semiconductor device damage; simulation; transmission line pulse shape; transmission line pulse technique; Biological system modeling; Distributed parameter circuits; Electrostatic discharge; Humans; Integrated circuit modeling; Pulse measurements; Pulse shaping methods; Semiconductor devices; Shape; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-58537-018-5

Type

conf

DOI

10.1109/EOSESD.2000.890032

Filename

890032