Title :
A method for determining a transmission line pulse shape that produces equivalent results to human body model testing methods
Author :
Lee, J.C. ; Hoque, M.A. ; Croft, G.D. ; Liou, J.J. ; Young, W.R. ; Bernier, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
Abstract :
Electrostatic discharge (ESD) is responsible for more than 25% of semiconductor device and chip damage each year. This paper focuses on an ESD event resulting from the charge being transferred from a human body to an integrated circuit (i.e. the human body model, HBM). In particular, the study provides simulation and experimental results to determine the main mechanism governing the failure of MOS devices subjected to the HBM stress. Based on this mechanism, the correct pulse needed to measure the HBM ESD characteristics using the transmission line pulse (TLP) technique is also determined and recommended.
Keywords :
MOS integrated circuits; MOSFET; circuit simulation; electrostatic discharge; failure analysis; integrated circuit modelling; integrated circuit testing; transmission lines; ESD; ESD event; HBM; HBM ESD characteristics; HBM stress; MOS device failure mechanism; TLP technique; charge transfer; electrostatic discharge; human body model; human body model testing methods; integrated circuit; semiconductor chip damage; semiconductor device damage; simulation; transmission line pulse shape; transmission line pulse technique; Biological system modeling; Distributed parameter circuits; Electrostatic discharge; Humans; Integrated circuit modeling; Pulse measurements; Pulse shaping methods; Semiconductor devices; Shape; Transmission lines;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-58537-018-5
DOI :
10.1109/EOSESD.2000.890032
