Analysis of high temperature characteristics and reliability of Asymmetry GCT

Author

Cailin, Wang ; Yong, Gao ; Li, Ma

Author_Institution

Dept. of Electron. Eng., Xian Univ. of Technol., Xi´´an

fYear

2008

fDate

21-24 April 2008

Firstpage

1

Lastpage

4

Abstract

The influences of temperature on the characteristics of asymmetry gate commutated thyristor (A-GCT) and its safe operating area (SOA) are analyzed. The blocking and conducting characteristics of A-GCT at high temperature is simulated by ISE simulator. The results show that, with the rise of temperature, the blocking voltage increases firstly and then decreases, the leakage current increases remarkably. The current density of A-GCT during conducting has a negative temperature coefficient and the conducting characteristic of A-GCT at high temperature is improved. Lastly, the influence of temperature on the reliability of A-GCT is discussed, and the measures of preventing the thermal failure of A-GCT device are given.

Keywords

current density; thyristor applications; asymmetry gate commutated thyristor; current density; high temperature characteristics; negative temperature coefficient; safe operating area; thermal failure; Anodes; Buffer layers; Cathodes; Current density; Inverters; Power semiconductor devices; Power system reliability; Temperature dependence; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Technology, 2008. ICIT 2008. IEEE International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-1705-6

Electronic_ISBN

978-1-4244-1706-3

Type

conf

DOI

10.1109/ICIT.2008.4608589

Filename

4608589