High current characteristics of devices in a 0.18 /spl mu/m CMOS technology

Author

Worley, E. ; Salem, Ali ; Sittampalam, Yoga

Author_Institution

Conexant Syst., Newport Beach, CA, USA

fYear

2000

fDate

26-28 Sept. 2000

Firstpage

296

Lastpage

307

Abstract

ESD protection networks can involve several different types of devices and associated interconnect. This paper examines the high current performance of several devices that can be found in the I/O cells of a 0.18 micron CMOS technology. Devices characterized include NFETs with and without N well drain resistors including segmented resistors, N well resistors, N channel field snap-back devices, PFETs, and diodes. Also examined is the performance of metal, contacts, and vias. Diode interconnect is also analyzed with respect to failure point and parasitic resistance.

Keywords

CMOS integrated circuits; MOSFET; electric resistance; electrostatic discharge; failure analysis; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; protection; resistors; semiconductor diodes; 0.18 micron; CMOS technology; ESD protection devices; ESD protection network interconnects; ESD protection networks; I/O cell devices; N channel field snap-back devices; N well drain resistors; N well resistors; NFETs; PFETs; contacts; diode interconnect; diodes; failure point; high current characteristics; high current performance; metallisation; parasitic resistance; segmented resistors; vias; CMOS technology; Clamps; Current density; Diodes; Electrostatic discharge; Failure analysis; Protection; Resistors; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-58537-018-5

Type

conf

DOI

10.1109/EOSESD.2000.890089

Filename

890089