DocumentCode :
2708350
Title :
A Robust RF MEMS Variable Capacitor with Piezoelectric and Electrostatic Actuation
Author :
Ikehashi, T. ; Ohguro, T. ; Ogawa, E. ; Yamazaki, H. ; Kojima, K. ; Matsuo, M. ; Ishimaru, K. ; Ishiuchi, H.
Author_Institution :
Toshiba Corp., Semicond. Co., Yokohama
fYear :
2006
fDate :
11-16 June 2006
Firstpage :
39
Lastpage :
42
Abstract :
An RF MEMS variable capacitor using hybrid actuation of piezoelectric and electrostatic forces is presented. A surface micromachining process is used to fabricate the device. The piezoelectric actuator, which uses thin film PZT, enables low voltage actuation while the electrostatic actuator realizes large capacitance ratio. The measured capacitance ratio is Cmax/Cmin=14 at 5V. We demonstrate that the hybrid actuation enables to lower the pull-in voltage without changing the pull-out voltage. We also show that the shift of pull-out voltage due to dielectric charging can be reduced drastically at actuation voltages below 10V. In this sense, the hybrid actuation can realize low voltage operation with enhanced robustness for stiction
Keywords :
capacitors; electrostatic actuators; lead compounds; micromachining; piezoelectric actuators; surface treatment; thin film devices; zirconium compounds; 5 V; PZT; PbZrO3TiO3; RF MEMS variable capacitor; capacitance ratio; dielectric charging; electrostatic actuation; electrostatic actuator; electrostatic forces; low voltage actuation; piezoelectric actuation; piezoelectric actuator; piezoelectric forces; pull-out voltage; surface micromachining process; thin film PZT; Capacitance measurement; Capacitors; Dielectric measurements; Electrostatic actuators; Low voltage; Micromachining; Piezoelectric actuators; Piezoelectric films; Radiofrequency microelectromechanical systems; Robustness; RF MEMS; dielectric charging; piezoelectric actuator; stiction; surface micromachining; variable capacitor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
ISSN :
0149-645X
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2006.249903
Filename :
4014812
Link To Document :
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