• DocumentCode
    2708379
  • Title

    Gain and efficiency of THz donor lasing in axially stressed silicon crystal

  • Author

    Shastin, V.N. ; Zhukavin, R.Kh. ; Kovalevsky, K.A. ; Tsyplenkov, V.V. ; Pavlov, S.G. ; Hübers, H.

  • Author_Institution
    Inst. for Phys. of Microstructures, Russian Acad. of Sci., Nizhny Novgorod, Russia
  • fYear
    2010
  • fDate
    5-10 Sept. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Liquid helium temperature experimental study of terahertz (4-6 THz) lasing of optically excited group-V donors in axially compressed silicon crystal are presented and discussed.
  • Keywords
    elemental semiconductors; semiconductor lasers; silicon; submillimetre wave lasers; Si; axially compressed silicon crystal; frequency 4 THz to 6 THz; group-V donors; liquid helium temperature; silicon crystal; terahertz donor lasing; Bismuth; Compressive stress; Crystals; Laser excitation; Laser modes; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-6655-9
  • Type

    conf

  • DOI
    10.1109/ICIMW.2010.5612342
  • Filename
    5612342
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2708379