Title :
Ultra-Low-Power Wideband High Gain InAs/AlSb HEMT Low-Noise Amplifiers
Author :
Ma, Bob Yintat ; Hacker, Jonathan B. ; Bergman, Joshua ; Nagy, Gabor ; Sullivan, Gerard ; Chen, Peter ; Brar, B.
Author_Institution :
Rockwell Sci. Co., Thousand Oaks, CA
Abstract :
Two antimonide-based compound semiconductor (ABCS) microstrip MMICs, single-stage and three-stage ultra-low-power wideband 0.01-11 GHz low-noise amplifiers using 0.1-mum gate length InAs/AlSb metamorphic HEMTs, have been fabricated and characterized on a GaAs substrate. From 0.3-11 GHz, the single-stage wideband LNA demonstrated a typical associated gain of 16 dB with less than 1.7 dB noise figure (2-11 GHz) at 5mW DC power dissipation, and the three-stage wideband LNA demonstrated a typical associated gain of 30 dB with less than 2.6 dB noise figure (2-11 GHz) at 7.5mW DC power dissipation. We believe these low noise amplifier MMICs demonstrate the lowest DC power consumption with the highest gain-bandwidth product of any MMIC to date. These results demonstrate the outstanding potential of ABCS HEMT technology for ultra-low-power wideband applications
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium arsenide; indium compounds; low noise amplifiers; low-power electronics; wideband amplifiers; 0.1 micron; 0.1 to 11 GHz; 16 dB; 30 dB; 5 mW; 7.5 mW; GaAs; HEMT low-noise amplifiers; InAs-AlSb; antimonide-based compound semiconductor; gain-bandwidth product; microstrip MMIC; wideband amplifiers; Gain; Gallium arsenide; HEMTs; Low-noise amplifiers; MMICs; Microstrip; Noise figure; Power dissipation; Ultra wideband technology; mHEMTs; InAs/AlSb HFET; LNA; MMIC; antimonide-based compound semiconductor (ABCS) HEMT; low noise amplifier; low power; ultra wideband;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249931
