• DocumentCode
    27086
  • Title

    Experimental Study of Defect Formations in GaAs Devices Using Gain, Photoluminescence and Deep Level Transient Spectroscopy

  • Author

    Bielejec, Edward ; Vizkelethy, Gyorgy ; Fleming, R.M. ; Serkland, Darwin K. ; McDonald, J.K. ; Patrizi, Gary A. ; King, D.B.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    60
  • Issue
    1
  • fYear
    2013
  • fDate
    Feb. 2013
  • Firstpage
    219
  • Lastpage
    223
  • Abstract
    We present an experimental methodology developed to probe the clustered defect formation in GaAs devices under both neutron and ion irradiations. The strengths, limitations, and path forward to gather structural defect information will be addressed.
  • Keywords
    III-V semiconductors; crystal defects; deep level transient spectroscopy; gallium arsenide; ion beam effects; neutron effects; photoluminescence; semiconductor devices; GaAs; deep level transient spectroscopy; gain spectroscopy; gallium arsenide devices; ion irradiation; neutron irradiation; photoluminescence spectroscopy; structural defect information; Gallium arsenide; Laboratories; Neutrons; Photoluminescence; Probes; Radiation effects; Silicon; Ion radiation effects; radiation effects; semiconductor devices;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2230646
  • Filename
    6419859
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=27086