DocumentCode :
2708614
Title :
A high S/N ratio and high full well capacity CMOS image sensor with active pixel readout feedback operation
Author :
Lee, Woonghee ; Akahane, Nana ; Adachi, Satoru ; Mizobuchi, Koichi ; Sugawa, Shigetoshi
Author_Institution :
Tohoku Univ., Sendai
fYear :
2007
fDate :
12-14 Nov. 2007
Firstpage :
260
Lastpage :
263
Abstract :
We discuss results of the design and operations of a CMOS image sensor with high S/N ratio while keeping wide dynamic range. Readout gains and input-referred noises of the image sensor are improved by actively using a pixel source follower feedback operation. A 1/4-inch 5.6 mum times 5.6 mum pixel VGA color CMOS image sensor with a lateral overflow integration capacitor in pixel in a 0.18 mum 2P3M CMOS process achieves about 1.7 times the gain compared with the case where the feedback operation is not positively used, resulting in a high input-referred conversion gain exceeded 200 muV/e-, a low input-referred noise below 2 e- without column amplifier and a high full well capacity of about 1.3 times 105 e-.
Keywords :
CMOS image sensors; 2P3M CMOS process; VGA color CMOS image sensor; active pixel readout feedback operation; high S/N ratio; high full well capacity CMOS image sensor; lateral overflow integration capacitor; pixel source follower feedback operation; size 0.18 micron; CMOS image sensors; CMOS process; Capacitors; Color; Colored noise; Dynamic range; Feedback; Image converters; Image sensors; Pixel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2007. ASSCC '07. IEEE Asian
Conference_Location :
Jeju
Print_ISBN :
978-1-4244-1359-1
Electronic_ISBN :
978-1-4244-1360-7
Type :
conf
DOI :
10.1109/ASSCC.2007.4425780
Filename :
4425780
Link To Document :
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