The influence of non-ideal base current on 1/f noise behaviour of bipolar transistors

The improved performance of a novel description of the low-frequency noise behavior of bipolar transistors, taking into account the magnitude of the non-ideal base current component, is demonstrated. Noise parameters for this model have been determined. Measurements show a quadratic dependence of noise level on both ideal and non-ideal base current, resulting in a constant parameter AF=2. Only two parameters therefore are necessary for a complete description of 1/f noise behavior. This model can describe the effect of transistor aging on the noise behavior in the cases where h_FE degrades due to an increase in non-ideal base current. The model allows simple geometrical scaling rules for the noise parameters KF and KFN, illustrating the physical validity of the model