• DocumentCode
    2708816
  • Title

    Investigation of GMR sensor microstructural changes induced by HBM ESD using advanced microscopy approach

  • Author

    Bordeos, Randy ; Lianzhu, Zhang ; Hung, Silas T F ; Wong, C.Y.

  • Author_Institution
    Shenzhen Kaifa Technol. Co. Ltd., China
  • fYear
    2000
  • fDate
    26-28 Sept. 2000
  • Firstpage
    485
  • Lastpage
    490
  • Abstract
    In theory, the microstructure of any material dictates its macroscopic properties. This study explores the microstructure of the GMR reader characterized during gradual ESD stressing and with the aid of the advanced analytical tools of AFM/MFM after enhanced imaging of GMR sensors by surface ion milling. It is known that ESD events can occur and manifest themselves exclusively either physically (melting of sensor element) or magnetically (sudden drop in electrical parameters when plotted against stress voltage) in GMR heads. A simulation study was directed using commercial HBM and dynamic electrical test machines to produce different types of ESD failure events. Preliminary results showed that ESD stressed and ESD-free GMR heads can be characterized and differentiated from one another using the simple surface technique of MFM. By using the combined analytical techniques which are particular to AFM and MFM coupled with methodical and systematic failure analysis, we are able to observe in-situ the previously unknown ESD phenomena unique to GMR heads.
  • Keywords
    atomic force microscopy; crystal microstructure; electronic equipment testing; electrostatic discharge; failure analysis; giant magnetoresistance; ion beam applications; machining; magnetic force microscopy; magnetic heads; magnetoresistive devices; reliability; AFM; ESD events; ESD failure events; ESD magnetic effects; ESD phenomena; ESD physical effects; ESD stressed GMR heads; ESD-free GMR heads; GMR heads; GMR reader microstructure; GMR sensor microstructural change; GMR sensors; HBM; HBM ESD; MFM; dynamic electrical test machines; electrical parameters; enhanced imaging; failure analysis; gradual ESD stressing; macroscopic properties; material microstructure; microscopy; sensor element melting; simulation; stress voltage; surface ion milling; Electrostatic discharge; Failure analysis; Image analysis; Image sensors; Magnetic analysis; Magnetic force microscopy; Magnetic heads; Magnetic sensors; Microstructure; Sensor phenomena and characterization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000
  • Conference_Location
    Anaheim, CA, USA
  • Print_ISBN
    1-58537-018-5
  • Type

    conf

  • DOI
    10.1109/EOSESD.2000.890122
  • Filename
    890122