DocumentCode
2708834
Title
Low resistance epitaxial CoSi2-contacts for VLSI circuits
Author
Adamski, C. ; Uffmann, D. ; Meiser, S. ; Niewöhner, L. ; Schäffer, C.
Author_Institution
Inst. fuer Halbleitertechnol., Hanover Univ., West Germany
fYear
1990
fDate
12-13 Jun 1990
Firstpage
468
Lastpage
470
Abstract
An investigation was conducted of the epitaxial growth of CoSi2 on heavily ion implanted Si(111) with low-energy electron diffraction (LEED) and Rutherford backscattering (RBS). After silicide formation, the dopant distribution in silicide and silicon was determined by secondary ion mass spectrometry (SIMS). In a self-aligned process epitaxial CoSi2/Si p+ contacts were produced. It was found that the specific contact resistance was lower than for polycrystalline CoSi2 contacts
Keywords
Rutherford backscattering; VLSI; cobalt compounds; contact resistance; integrated circuit technology; low energy electron diffraction; metallisation; ohmic contacts; secondary ion mass spectra; semiconductor technology; semiconductor-metal boundaries; CoSi2-Si; LEED; RBS; Rutherford backscattering; SIMS; Si; VLSI circuits; dopant distribution; epitaxial CoSi2/Si p+ contacts; epitaxial growth; heavily ion implanted Si(111); low resistance CoSi2 contacts; low-energy electron diffraction; ohmic contacts; polycrystalline CoSi2 contacts; secondary ion mass spectrometry; self-aligned process; silicide formation; specific contact resistance; Annealing; Boron; Circuits; Contact resistance; Electrical resistance measurement; Molecular beam epitaxial growth; Silicides; Silicon; Substrates; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location
Santa Clara, CA
Type
conf
DOI
10.1109/VMIC.1990.127932
Filename
127932
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