Characteristic analysis and key parameter extraction of SJ MOSFET

The influences of key parameters of the SJ MOSFET on the breakdown voltage (V_BR) and conducting resistance (R _on) are analyzed by using ISE TCAD simulator. The key parameters include the concentration, width and length of pillar regions. Based on the simulation results, combined with the practical process, two design schemes with the minimal R _on and the lowest process cost are proposed. Extraction method of key parameters is given under each design schemes respectively. The result has the reference value for the design and fabrication of SJ MOSFET.