Title :
Simulated Performance of SiC Based OP-AMP at High Temperature
Author :
Jeesung Jung ; Huang, Alex Q. ; Zhong Du
Author_Institution :
Semicond. Power Electron. Center, North Carolina State Univ., Raleigh, NC
Abstract :
Silicon carbide (SiC) is significantly superior to silicon for high power and high temperature applications. However, currently SiC devices are suffering from some imperfect material properties, such as low channel mobility which results the low transconductance from the circuit design point of view. The possibility of a SiC analog integrated circuit is investigated by comparing analog circuit design parameters between the SiC and Si FET two-stage Op-Amps with temperature variation
Keywords :
JFET integrated circuits; analogue integrated circuits; high-temperature electronics; integrated circuit design; operational amplifiers; silicon compounds; wide band gap semiconductors; FET two-stage Op-Amps; SiC; analog integrated circuit design parameters; channel mobility; high temperature applications; silicon carbide; Analog circuits; Analog integrated circuits; Circuit simulation; Circuit synthesis; FETs; Material properties; Operational amplifiers; Silicon carbide; Temperature; Transconductance;
Conference_Titel :
Power Electronics Specialists Conference, 2006. PESC '06. 37th IEEE
Conference_Location :
Jeju
Print_ISBN :
0-7803-9716-9
DOI :
10.1109/PESC.2006.1711752
