Title :
The use of TiSi2 local interconnect as an effective contact etch barrier
Author :
Seams, C. ; Stolmeijer, A. ; Parekh, N. ; Jonkers, A. ; Godon, H.
Author_Institution :
Philips Components, Eindhoven, Netherlands
Abstract :
TiSi2 local interconnect was used as an overetch barrier layer for shallow submicron contacts in a fully planarized submicron salicide CMOS process used for manufacturing 1-Mb SRAMs. By placing a pad of local interconnect under all contacts to polysilicon, the complete removal of the silicide is prevented. The result is a stable, low contact resistance to polysilicon
Keywords :
CMOS integrated circuits; SRAM chips; VLSI; integrated circuit technology; metallisation; ohmic contacts; sputter etching; titanium compounds; 1 Mbit; 1-Mb SRAMs; TiSi2 local interconnect; TiSi2-Si contact; contact etch barrier; fully planarized submicron salicide CMOS process; low contact resistance to polysilicon; overetch barrier layer; polycrystalline Si; shallow submicron contacts; stable contacts; Amorphous silicon; CMOS technology; Contact resistance; Degradation; Etching; Manufacturing processes; Random access memory; Resists; Silicides; Titanium;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127937
