DocumentCode :
2709741
Title :
Continuous wave Terahertz photomixer from low temperature grown GaAs with high carrier mobility
Author :
Tanoto, H. ; Wu, Q.Y. ; Teng, J.H. ; Sun, M. ; Chen, Z.N. ; Htoo, T. ; Chua, S.J. ; Lampin, J.F. ; Gokarna, A. ; Dogheche, E.
Author_Institution :
Inst. of Mater. Res. & Eng., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore
fYear :
2010
fDate :
5-10 Sept. 2010
Firstpage :
1
Lastpage :
2
Abstract :
Low temperature GaAs grown by an MBE system exhibiting Hall carrier mobility of 5000 cm2/v.s. is fabricated into continuous-wave (CW) Terahertz (THz) photomixers utilizing a dual-dipole antenna with an interdigitated feed structure. The characteristics of the CW THz photomixer are presented.
Keywords :
III-V semiconductors; antenna feeds; carrier mobility; dipole antennas; gallium compounds; mixers (circuits); terahertz wave devices; wide band gap semiconductors; CW THz photomixer; GaAs; Hall carrier mobility; MBE system; continuous wave terahertz photomixer; dual dipole antenna; interdigitated feed structure; Bolometers; Gallium arsenide; Optical pumping; Stimulated emission; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
Type :
conf
DOI :
10.1109/ICIMW.2010.5612417
Filename :
5612417
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2709741
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