DocumentCode :
2709869
Title :
Advanced thin films for electronics and opto-electronic´s by atomic layer epitaxy
Author :
Niinistö, Lauri
Author_Institution :
Lab. of Inorg. & Anal. Chem., Helsinki Univ. of Technol., Espoo, Finland
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
33
Abstract :
Atomic Layer Epitaxy (ALE) is a novel thin film deposition technique utilizing gaseous precursors and chemical reactions. It can be considered as a variant of the well-established CVD method but through its inherent surface control ALE offers several attractive features for micro- and nanotechnology. These include excellent conformality, sharp interfaces and accurate thickness control. The principle and practice of ALE are described from the point of view of materials and applications and its present and future potential is discussed
Keywords :
atomic layer epitaxial growth; atomic layer epitaxy; chemical reaction; electronics; gaseous precursor; microtechnology; nanotechnology; optoelectronics; thin film deposition; Atomic layer deposition; Chemical industry; Chemical vapor deposition; Electroluminescent devices; Epitaxial growth; Flat panel displays; Sputtering; Substrates; Transistors; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
Type :
conf
DOI :
10.1109/SMICND.2000.890186
Filename :
890186
Link To Document :
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