DocumentCode
2709869
Title
Advanced thin films for electronics and opto-electronic´s by atomic layer epitaxy
Author
Niinistö, Lauri
Author_Institution
Lab. of Inorg. & Anal. Chem., Helsinki Univ. of Technol., Espoo, Finland
Volume
1
fYear
2000
fDate
2000
Firstpage
33
Abstract
Atomic Layer Epitaxy (ALE) is a novel thin film deposition technique utilizing gaseous precursors and chemical reactions. It can be considered as a variant of the well-established CVD method but through its inherent surface control ALE offers several attractive features for micro- and nanotechnology. These include excellent conformality, sharp interfaces and accurate thickness control. The principle and practice of ALE are described from the point of view of materials and applications and its present and future potential is discussed
Keywords
atomic layer epitaxial growth; atomic layer epitaxy; chemical reaction; electronics; gaseous precursor; microtechnology; nanotechnology; optoelectronics; thin film deposition; Atomic layer deposition; Chemical industry; Chemical vapor deposition; Electroluminescent devices; Epitaxial growth; Flat panel displays; Sputtering; Substrates; Transistors; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-5885-6
Type
conf
DOI
10.1109/SMICND.2000.890186
Filename
890186
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