Frequency Limits of Bipolar Integrated Circuits

Author

Rodwell, Mark ; Griffith, Z. ; Parthasarathy, N. ; Singisetti, U. ; Paidi, V. ; Urteaga, M. ; Pierson, R. ; Rowell, P. ; Brar, B.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA

fYear

2006

fDate

11-16 June 2006

Firstpage

329

Lastpage

332

Abstract

InP HBTs at the 500 nm scaling generation have attained 450 GHz balanced cutoff frequencies and ~4 V breakdown. With such devices, 150 GHz digital circuits (static dividers) have been demonstrated. 175 GHz amplifiers have been demonstrated with slower HBTs. We discuss transistor scaling laws and scaling limits for realizing digital and analog/RF circuits at sub-mm-wave frequencies; the most critical limitations are metal/semiconductor contact resistivities and dissipated power densities. Given present contact performance and thermal design, 230 GHz digital ICs and 300 GHz power amplifiers are feasible today

Keywords

III-V semiconductors; MIMIC; bipolar integrated circuits; indium compounds; power amplifiers; 150 GHz; 175 GHz; 230 GHz; 300 GHz; 450 GHz; 500 nm; InP; balanced cutoff frequencies; bipolar digital integrated circuits; heterojunction bipolar transistors; metal-semiconductor contact resistivities; millimeter wave integrated circuits; power amplifiers; static dividers; thermal design; transistor scaling laws; Bandwidth; Bipolar integrated circuits; Contact resistance; Cutoff frequency; Electric breakdown; HEMTs; Indium phosphide; Laser noise; MODFETs; Schottky diodes; Bipolar digital integrated circuits; Heterojunction bipolar transistors; Millimeter wave integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249518

Filename

4014895