A 3.1-5GHz high and flat gain UWB LNA

Author

Wu, Wei ; Nagaraju, Manohar ; Charles, Cameron T. ; Fan, Xiaoya

fYear

2009

fDate

27-29 Oct. 2009

Firstpage

1138

Lastpage

1141

Abstract

A 3.1-5 GHz Ultra Wideband (UWB) CMOS low noise amplifier (LNA) with high gain and noise cancellation is presented. The LNA is composed of two stages-an input common-gate stage with a resonant load at 3.1 GHz, driving a common source stage with a resonant load of 5 GHz. Noise cancellation is achieved through the forward feedback technique, and an output buffer has been added for test purposes. The amplifier has been designed in a 0.65 nm CMOS process, and has a power gain of 21 dB that varies less than Â±0.5 dB across the 3.1-5 GHz band with a noise figure of less than 5.4 dB. The LNA consumes 8 mA of current from 1 V power supply and occupies 0.24 mm² of chip area.

Keywords

CMOS integrated circuits; feedback; field effect MMIC; integrated circuit noise; low noise amplifiers; ultra wideband technology; common source stage; current 8 mA; flat gain UWB LNA; forward feedback technique; frequency 3.1 GHz to 5 GHz; gain 21 dB; high gain UWB LNA; input common-gate stage; noise cancellation; noise figure; resonant load; size 0.65 nm; ultra wideband CMOS low noise amplifier; voltage 1 V; Broadband amplifiers; CMOS process; Gain; Low-noise amplifiers; Noise cancellation; Output feedback; Power amplifiers; Resonance; Testing; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2009 3rd IEEE International Symposium on

Conference_Location

Beijing

Print_ISBN

978-1-4244-4076-4

Type

conf

DOI

10.1109/MAPE.2009.5355958

Filename

5355958