Terahertz Multiplier Circuits

Author

Mehdi, I. ; Chattopadhyay, G. ; Schlecht, E. ; Ward, J. ; Gill, J. ; Maiwald, F. ; Maestrini, A.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA

fYear

2006

fDate

11-16 June 2006

Firstpage

341

Lastpage

344

Abstract

Robust radiation sources in the 1-2 THz range have been sorely lacking from the repertoire of terahertz technologists and scientists. This paper reviews the progress in chip fabrication technology, based on planar GaAs Schottky diodes, that has enabled the design and fabrication of multiplier circuits working well into the terahertz range. Recent results obtained with multiplied sources in the 1-2 THz range were summarized

Keywords

III-V semiconductors; MMIC frequency convertors; Schottky diodes; frequency multipliers; gallium arsenide; submillimetre wave circuits; 1 to 2 THz; GaAs; chip fabrication; frequency multipliers; planar Schottky diodes; radiation sources; terahertz multiplier circuits; Anodes; Chip scale packaging; Circuits; Fabrication; Frequency; Gallium arsenide; Radiofrequency identification; Robustness; Schottky diodes; Submillimeter wave technology; LO sources; Schottky diodes; Terahertz technology; frequency multipliers; heterodyne receivers; varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249521

Filename

4014898