DocumentCode :
271
Title :
Electron-Field-Emission Properties of Gallium Compound by Ammonification of Ga 2O 
Nanowires
Author :
Han-Ting Hsueh ; Wen-Yin Weng ; Tsung-Ying Tsai ; Shoou-Jinn Chang
Author_Institution :
Nat. Nano Devices Labs., Tainan, Taiwan
Volume :
12
Issue :
5
fYear :
2013
fDate :
Sept. 2013
Firstpage :
692
Lastpage :
695
Abstract :
The authors report the growth of β-Ga2O3 nanowires and the conversion of β-Ga2O3 nanowires to gallium nitride (GaN) nanowires through ammonification, and the fabrication of nanowires-based field emitters. The threshold field of Ga2O3 nanowires was 5.65 V/μm. After ammonification under 750, 800 and 900°C, the threshold fields became smaller which were 3.82, 3.03 and 2.12 V/μm, respectively. While the ammonification temperature was increased to 950°C, the threshold field drastically increased to 13.13 V/μm.
Keywords :
III-V semiconductors; electron field emission; gallium compounds; nanofabrication; nanowires; semiconductor growth; wide band gap semiconductors; Ga2O3; GaN; electron-field-emission properties; gallium compound; gallium nitride nanowires; nanowire ammonification; nanowire growth; nanowire-based field emitters; temperature 750 degC; temperature 800 degC; temperature 900 degC; threshold fields; Ga$_{2}$ $_{3}$
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2013.2268854
Filename :
6542739
Link To Document :
