Optimization of THz pulses emitted by an InGaAs photoconductive switch

Author

Tissafi, B. ; Grimault-Jacquin, A.S. ; Aniel, F.

Author_Institution

Inst. d´´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France

fYear

2010

fDate

5-10 Sept. 2010

Firstpage

1

Lastpage

3

Abstract

We present here some results concerning the optimization of the amplitude or of the band pass (namely the Full Width at Half Maximum - FWHM) of the THz pulse generated by an InGaAs photoconductive (PC) switch inserted in a coplanar waveguide by using 3D modeling. The impedance of the waveguides, the static bias conditions, the optical pulse intensity and the relative dimension of the laser pulse in comparison with the active PC gap are discussed.

Keywords

III-V semiconductors; coplanar waveguides; electric impedance; gallium arsenide; indium compounds; photoconducting switches; semiconductor device models; submillimetre wave devices; 3D modeling; InGaAs; THz pulse emission; band pass; coplanar waveguide; impedance; optical pulse intensity; photoconductive switch; static bias conditions; Coplanar waveguides; Dielectric losses; Finite difference methods; Mathematical model; Optical switches; Optical waveguides; Time domain analysis; CPW; FDTD; Terahertz photoconductive switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on

Conference_Location

Rome

Print_ISBN

978-1-4244-6655-9

Type

conf

DOI

10.1109/ICIMW.2010.5612435

Filename

5612435