Sub-terahertz resistive mixing in an AlGaN/GaN FET

Author

Madjour, K. ; Ducournau, G. ; Lepilliet, S. ; Akalin, T. ; Lampin, J.F. ; Poisson, M.A. ; Delage, S. ; Gaquière, C.

Author_Institution

Inst. d´´Electron. de Microelectron. et de Nanotechnol., Univ. de Lille 1, Villeneuve-d´´Ascq, France

fYear

2010

fDate

5-10 Sept. 2010

Firstpage

1

Lastpage

2

Abstract

An AlGaN/GaN based field effect transistor (FET) has been designed, fabricated, and used as a resistive mixer for heterodyne detection in the 140-220 GHz frequency range. A double VNA heterodyne measurement setup has been used in an on-wafer configuration to accurately quantify the incident radiation absorbed by the device. The appropriate selection of optimum biasing conditions for minimum conversion losses is investigated. 47.3 dB conversion losses are obtained at 150 GHz and the device linearity is confirmed.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; millimetre wave field effect transistors; submillimetre wave mixers; wide band gap semiconductors; AlGaN-GaN; FET; biasing conditions; conversion losses; device linearity; double VNA heterodyne measurement; field effect transistor; frequency 140 GHz to 220 GHz; on-wafer configuration; subterahertz resistive mixing; Aluminum gallium nitride; FETs; Gallium nitride; Linearity; Logic gates; Mixers;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on

Conference_Location

Rome

Print_ISBN

978-1-4244-6655-9

Type

conf

DOI

10.1109/ICIMW.2010.5612437

Filename

5612437